Shenzhen Best LED Opto-elektroniki Co, Ltd inatoa aina ya LED na urefu tofauti wa urefu kutoka 365nm hadi 1550nm. Kwa infrared LED, wavelength inaweza kuwa: 660nm 680nm 690nm 700nm 710nm 720nm 730nm 740nm 750nm 760nm 770nm 780nm 800nm 810nm 820nm 830nm 850nm 860nm 870nm 880nm 890nm 900nm 905nm 910nm 920nm 940nm 950nm 970nm 980nm 1000nm 1020nm 1050nm 1200nm 1300nm 1500nm 1550nm. Kwa UV UV, urefu wa urefu unaweza kuwa 365nm 370nm 380nm 390nm 400nm 410nm 420nm 430nm nk urefu mwingine wa urefu pia unapatikana ambao hufanywa na AlGaAs / AlGaAs chip infrared chip. Taa hizi zina utendaji thabiti na maisha marefu.3528 SMD LED 750nmis diode ya kutolea moshi yenye ufanisi wa infrared katika GaAlAs kwenye teknolojia ya GaAs, iliyoundwa kwa wazi, vifurushi vyeupe vyeupe vya plastiki. Uboreshaji wa nguvu ya ant 100% kwa urefu sawa wa urefu. Voltages za mbele kwa sasa ya chini na kwa kiwango cha juu cha sasa kina sawa na maadili ya chini ya teknolojia ya kawaida. Kwa hivyo watoaji hawa wanafaa kabisa kama uingizwaji wa hali ya juu wa wauzaji wa kiwango. Uvumilivu wa doa nyekundu infrared LED wavelength ni withing ± 10nm. Jozi za IR

- Vigezo vya Vipimo -

Kesi hizi za SMD LED zinapatikana pia kwa IR LED, UV LED, Blue SMD LED, Red SMD LED, Amber LED ect.

- Kutoa Rangi -

- Vigezo vya Umeme -

Viwango vya juu kabisa kwa Ta = 25 ℃

Parameter	Symbol	Rating
Power Dissipation	Pd	270mW
Pulse Forward Current	IFP	350mA
Forward Current	IF	100mA
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Tempertature	Topr	-40 - +80°C
Storage Tempertature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	2000v
Warranty	Time	5Years
Antistatic bag	Piece	2000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Tabia za macho na umeme ( T c = 25 ℃ )

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Forward Voltage	VF	2.2		2.7	V	IF=100mA
Pulse Forward Voltage	VF		3.6		V	IFP=350mA
Radiant Intensity	IE	50		70	mw/sr	IF=100mA
Peak Wavelength	λP	750	755	760	nm	IF=100mA
Total Radiated Power	PO		5.6		mw	IF=100mA
Half Width	Dl		50		nm	IF=100mA
Viewing Half Angle	2q1/2		±60		deg	IF=100mA
Reverse Current	IR			5	uA	VR=5V
Rise Time	Tr		25		ns	IF=100mA
Fall Time	Tf		13		ns	IF=100mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

- LED ya 750nm -

- Uunganisho wa waya wa Dhahabu -

* Ili kuweka kila urefu wa maisha ya LED, kiwanda cha BestLED hutumia waya safi wa dhahabu safi kwa unganisho la mzunguko wa ndani

- Ufungashaji -

* Tunakipakia na kufunga utupu baada ya mkanda kama reel

-Maombi-

- LED inayohusiana ya IR -

- Matumizi ya LED ya 750nm -